VNS1NV04DP-E, МОП-транзистор, N Канал, 1.7 А, 45 В, 0.25 Ом

Характеристики

VNS1NV04DP-E, МОП-транзистор, N Канал, 1.7 А, 45 В, 0.25 Ом The VNS1NV04DP-E is a 40V Fully Auto Protected Power MOSFET formed by two monolithic OMNIFET II chips. The OMNIFET II is designed in VIPower™ M0-3 technology intended for replacement of standard power MOSFETS in DC to 50KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments. Fault feedback can be detected by monitoring the voltage at the input pin.

• Linear current limitation
• Thermal shutdown
• Short-circuit protection
• Integrated clamp
• Low current drawn from input pin
• Diagnostic feedback through input pin
• ESD protection
• Direct access to the gate of the power MOSFET (analogue driving)
• Compatible with standard power MOSFET

Полупроводники — ДискретныеТранзисторыМОП-транзисторы