IXFB132N50P3, МОП-транзистор, N Канал, 132 А, 500 В

Характеристики

IXFB132N50P3, МОП-транзистор, N Канал, 132 А, 500 В The IXFB132N50P3 is a Polar3™ single N-channel enhancement-mode Power MOSFET with fast intrinsic diode (HiPerFET™). The Polar3™ power MOSFET family is the latest addition to IXYS benchmark high-performance polar-series power MOSFET product line. This new device is manufactured using IXYS proprietary Polar3™ technology platform, yielding new and improved device that features an optimized combination of low ON-state resistance and gate charge. The end result is a device that achieves a figure of merit (FOM) performance index (device ON-resistance multiplied by gate charge) as low as 9.6RnC. Additional device features include low thermal resistances (RthJC), dynamic dV/dt ratings, high power dissipation (Pd) and high avalanche energy capabilities. These outstanding electrical and thermal device characteristics are essential for implementing improved power efficiency and reliability in today’s demanding high-voltage conversion system.

• Dynamic dV/dt rating
• Avalanche rating
• High power dissipation (Pd)
• Low thermal resistance (Rthjc)
• Fast intrinsic rectifier
• Low gate drive power requirements
• Low package inductance
• High power density
• Reduces conduction and switching losses
• Enables high-speed switching
• Promotes use of smaller passive components
• Promotes use of simple economical gate drive solutions
• Cooler device operation
• Enables system miniaturization
• Increased device ruggedness
• Easy to mount

Полупроводники — ДискретныеТранзисторыМОП-транзисторы