IRLI520NPBF, МОП-транзистор, N Канал, 7.7 А, 100 В, 180 мОм

Характеристики

IRLI520NPBF, МОП-транзистор, N Канал, 7.7 А, 100 В, 180 мОм The IRLI520NPBF is a HEXFET® fifth generation N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation. The package eliminates the need for additional insulating hardware. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heat sink. This isolation is equivalent to using a 100 micron mica barrier. The package is mounted to a heat sink using a single clip or by a single screw fixing.

• Logic level gate drive
• Advanced process technology
• Isolated package
• Fully avalanche rating
• Low static drain-to-source ON-resistance
• Logic level

Полупроводники — ДискретныеТранзисторыМОП-транзисторы