IRG4BC40W-LPBF, БТИЗ транзистор, N-канальный, 40 А, 2.36 В

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IRG4BC40W-LPBF, БТИЗ транзистор, N-канальный, 40 А, 2.36 В Single IGBT over 21A, International Rectifier
Optimised IGBTs designed for medium frequency applications with fast response and provide the user with the highest efficiency available. Utilising FRED diodes optimised to provide the best performance with IGBT’s

IGBT Transistors, International Rectifier
International Rectifier offers an extensive IGBT (Insulated-Gate Bipolar Transistor) portfolio ranging from 300V to 1200V based on various technologies that minimize switching and conduction losses to increase efficiency, reduce thermal problems and improve power density. The company also offers a broad range of IGBT dies designed specifically for medium- to high-power modules. For modules that demand the highest reliability, solderable front metal (SFM) dies can be employed to eliminate bond wires and allow double-sided cooling for improved thermal performance, reliability and efficiency.Полупроводники — ДискретныеТранзисторыБТИЗ Одиночные