NDT2955, МОП-транзистор, P Канал, -2.5 А, -60 В, 300 мОм

Характеристики

NDT2955, МОП-транзистор, P Канал, -2.5 А, -60 В, 300 мОм The NDT2955 from Fairchild is a surface mount, 60V P channel enhancement mode field effect transistors in SOT-223 package. Transistor is produced using Fairchild’s high voltage trench process and suitable for power management applications.

• High density cell design for extremely low Rds(ON)
• Drain to source voltage (Vds) of -60V
• Gate to source voltage of ±20V
• Continuous drain current (Id) of -2.5A
• Power dissipation (pd) of 3W
• Low on state resistance of 163mohm at Vgs -4.5V
• Operating temperature range -55 C to 150 C

Полупроводники — ДискретныеТранзисторыМОП-транзисторы