IXFK98N50P3, МОП-транзистор, N Канал, 98 А, 500 В, 0.05 Ом

Характеристики

IXFK98N50P3, МОП-транзистор, N Канал, 98 А, 500 В, 0.05 Ом The IXFK98N50P3 is a Polar3™ single N-channel enhancement-mode Power MOSFET with fast intrinsic diode (HiPerFET™). The Polar3™ power MOSFET family is the latest addition to IXYS benchmark high-performance polar-series power MOSFET product line. This new device is manufactured using IXYS proprietary Polar3™ technology platform, yielding new and improved device that features an optimized combination of low ON-state resistance and gate charge. The end result is a device that achieves a figure of merit (FOM) performance index (device ON-resistance multiplied by gate charge) as low as 9.6RnC. Additional device features include low thermal resistances (RthJC), dynamic dV/dt ratings, high power dissipation (Pd) and high avalanche energy capabilities. These outstanding electrical and thermal device characteristics are essential for implementing improved power efficiency and reliability in today’s demanding high-voltage conversion system.

• Dynamic dV/dt rating
• Avalanche rating
• Low Qg
• Low static drain-to-source ON-resistance
• Low drain-to-tab capacitance
• Low package inductance
• Easy to mount
• Space saving

Полупроводники — ДискретныеТранзисторыМОП-транзисторы