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Характеристики
IRLR8103VPBF, МОП-транзистор, N Канал, 91 А, 30 В The IRLR8103VPBF is a HEXFET® single N-channel Power MOSFET ideal for CPU core DC-to-DC converters. This new device employs advanced HEXFET® power MOSFET technology to achieve an unprecedented balance of ON-resistance and gate charge. The reduced conduction and switching losses make it ideal for high efficiency DC-to-DC converters that power the latest generation of microprocessors. The IRLR8103V has been optimized for all parameters that are critical in synchronous buck converters including RDS (ON), gate charge and CdV/dt-induced turn-ON immunity. The IRLR8103V offers an extremely low combination of Qsw and RDS (ON) for reduced losses in both control and synchronous FET applications. The package is designed for vapour phase, infrared, convection or wave soldering techniques. Power dissipation of greater than 2W is possible in a typical PCB mount application. This minimizes parallel MOSFET is ideal for high current applications.
• Low conduction losses
• Low switching losses
• 100% Rg tested
• Fully avalanche rating
• Logic Level
Полупроводники — ДискретныеТранзисторыМОП-транзисторы
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