Характеристики
IRF7601PBF, МОП-транзистор, N Канал, 5.7 А, 20 В, 35 мОм The IRF7601PBF is a HEXFET® single N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation.
• Generation V technology
• Ultra-low ON-resistance
• Low profile (